| PART |
Description |
Maker |
| APT2X101D120J APT2X100D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 100A
|
ADPOW[Advanced Power Technology]
|
| APT2X101D40J APT2X100D40J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 400V 100A
|
ADPOW[Advanced Power Technology]
|
| APT2X101D20J APT2X100D20J |
ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 双超快软恢复整流二极
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 200V 100A
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| STE36N50 |
N Channel Enhancement Mode Power MOS Transistor in Isotop Package
|
ST Microelectronics
|
| STE250N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE -通道增强型功率MOS器件中的ISOTOP封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| APT100GT120JRDQ4 |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60;
|
MICROSEMI POWER PRODUCTS GROUP
|
| APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| PLED512 |
DUAL LINE 5 VOLT DIE
|
PROTEC[Protek Devices]
|
| FMTS06N20ED |
6.5A 20V Dual Die N-Channel
|
First Components Intern...
|
